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SST34HF324G Datasheet 32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory

Manufacturer: Silicon Storage Technology

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Datasheet Details

Part number SST34HF324G
Manufacturer Silicon Storage Technology
File Size 540.96 KB
Description 32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory
Datasheet download datasheet SST34HF324G Datasheet

General Description

The SST34HF324G ComboMemory devices integrate a 2M x16 CMOS flash memory bank with 256K x16 CMOS SRAM memory bank in a multi-chip package (MCP).

These devices are fabricated using SST’s proprietary, highperformance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches.

The SST34HF324G devices are ideal for applications such as cellular phones, GPS devices

Overview

32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory www.DataSheet4U.

Key Features

  • Flash Organization: 2M x16.
  • 32 Mbit: 24Mbit + 8Mbit.
  • Concurrent Operation.
  • Read from or Write to SRAM while Erase/Program Flash.
  • SRAM Organization:.
  • 4 Mbit: 256K x16.
  • Single 2.7-3.3V Read and Write Operations.
  • Superior Reliability.
  • Endurance: 100,000 Cycles (typical).
  • Greater than 100 years Data Retention.
  • Low Power Consumption: (typical values @ 5 MHz).
  • Active Current: Flash 10 mA (typi.

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