SST34HF324G
Key Features
- Flash Organization: 2M x16 - 32 Mbit: 24Mbit + 8Mbit
- Concurrent Operation - Read from or Write to SRAM while Erase/Program Flash
- SRAM Organization: - 4 Mbit: 256K x16
- Single 2.7-3.3V Read and Write Operations
- Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
- Low Power Consumption: (typical values @ 5 MHz) - Active Current: Flash 10 mA (typical) SRAM 6 mA (typical) - Standby Current: 10 µA (typical)
- Hardware Sector Protection (WP#) - Protects 4 outer most sectors (8 KWord) in the smaller bank by holding WP# low and unprotects by holding WP# high
- Hardware Reset Pin (RST#) - Resets the internal state machine to reading data array
- Sector-Erase Capability - Uniform 2 KWord sectors
- Block-Erase Capability - Uniform 32 KWord blocks
